Ioannis Paradeisanos obtained his B.Sc. in 2012 from the University of 
Crete in Greece. In September 2014, he completed his Masters’ studies in 
micro-optoelectronics at the Physics department of the University of 
Crete and in March 2018 he obtained his Ph.D. degree from the same 
department. During his Ph.D. dissertation he studied the physics of 
different excitonic species in atomically thin semiconductors. After 
that, he moved as a postdoctoral research associate to the University of 
Cambridge, where he worked on the optical and vibrational properties of 
layered materials. From October 2019 to September 2022 he was a member 
of the Quantum Optoelectronics group in Toulouse to study the optical 
properties of transition metal dichalcogenide monolayers and their 
heterostructures. In October 2022 he moved to Crete and IESL/FORTH with 
a financial support by the Hellenic Foundation for Research and 
Innovation (H.F.R.I.) under the “3rd Call for H.F.R.I. Research Projects 
to support Post-Doctoral Researchers.

Education

• 2018, Ph. D. in Exciton Physics, Physics Department, University of Crete, Greece.
• 2014, M. Sc in Micro-Optoelectronics, Physics Department, University of Crete, Greece.
• 2012, B. Sc, Department of Materials Science & Technology, University of Crete, Greece.

Career

• 10/2022 - Today, H.F.R.I. Research Fellow, FORTH-IESL, Greece
• 10/2019 - 09/2022, Senior Research Associate, Quantum Optoelectronics Group, INSA/CNRS, Toulouse, France
• 04/2018 - 09/2019, Research Associate, University of Cambridge, UK

Interests

• Light-matter interactions in 2D semiconductors
• Exciton formation and relaxation
• Spin-valley polarization phenomena
• Exciton-exciton, exciton-phonon, exciton-carrier interactions
• Stark and Zeeman effects
• Interlayer coupling in 2D heterostructures
• Lattice vibrations and phonons
• Near-field interactions