Publications
Decision and function problems based on boson sampling
Phys. Rev. A, 94, 012315 , 2016, doi.org/10.1103/PhysRevA.94.012315
Accessing extreme spatiotemporal localization of high-power laser radiation through transformation optics and scalar wave equations
PHYSICAL REVIEW LETTERS, 117, 4, 043902, 2016, https://doi.org/10.1103/PhysRevLett.117.043902
In-situ SiNx/InN structures for InN field-effect transistors
App. Phys. Letters, 108, 142102, 2016, https://doi.org/10.1063/1.4945668
Evaluation of the performance of two state-transfer Hamiltonians in the presence of static disorder
Quant. Inf. Proc., 15, 2553, 2016, doi.org/10.1007/s11128-016-1287-y
Selective-area growth of GaN nanowires on SiO2-masked Si (111) substrates by molecular beam epitaxy
Journal of Applied Physics, 119, 224305, 2016, doi.org/10.1063/1.4953594
Hydration-induced spin-glass state in a frustrated Na-Mn-O triangular lattice
Phys. Rev. B, 93, 184422, 2016, doi.org/10.1103/PhysRevB.93.184422
Drop-casted Graphene Oxide Love wave sensor for detection of humidity and VOCs
Journal of Integrated Circuits and Systems, 11, 1, 49 - 56, 2016, www.sbmicro.org.br/jics/html/artigos/vol11no1/6.pdf
Matter-wave interferometers using TAAP rings
N J Phys, 18, 075014, 2016, dx.doi.org/10.1088/1367-2630/18/7/075014
Molecular beam epitaxy of thick InGaN(0001) films: Effects of substrate temperature on structural and electronic properties
Journal of Crystal Growth, 437, 20 - 25, 2016, doi.org/10.1016/j.jcrysgro.2015.12.012
Technology of integrated self-aligned E/D-mode n++GaN/InAlN/AlN/GaN MOS HEMTs for mixed-signal electronics
Semicond. Sci. Technol., 31, 6, 065011, 2016, doi.org/10.1088/0268-1242/31/6/065011