Publications

Spin-Polarized Hydrogen Atoms from Molecular Photodissociation

11. T.P. Rakitzis, P.C. Samartzis, R.L. Toomes, T.N. Kitsopoulos, Alex Brown, G.G. Balint-Kurti, O.S. Vasyutinskii, J.A. Beswick

Science, 300, 1936, 2003, doi.org/10.1126/science.1084809

Smart polymer surfaces

S. H. Anastasiadis, H. Retsos, S. Pispas, N. Hadjichristidis, and S. Neophytides

Macromolecules, 36, 6, 1994-1999, 2003, doi.org/10.1021/ma0211129

Pulsed-laser deposition of NiMnSb thin films at moderate temperatures

J. Giapintzakis, C. Grigorescu, A. Klini, A. Manousaki, V. Zorba, J. Androulakis, Z. Viskadourakis, and C. Fotakis

Appl. Surf. Sci. , 197, 421, 2002, 10.1016/S0169-4332(02)00353-7

The role of As precipitates on ultrafast electron trapping in low-temperature-grown GaAs and AlGaAs alloys

P. A. Loukakos, C. Kalpouzos, I. E. Perakis, Z. Chatzopoulos, M. Sfendourakis, G. Konstantinidis, and C. Fotakis

J. Appl. Phys., 91, 9863, 2002, https://doi.org/10.1063/1.1477614

Collective behaviour in a system of two-level atoms at the edge of a photonic band-gap

G. M. Nikolopoulos, P. Lambropoulos

J. Mod. Opt. , 49, 61, 2002, doi.org/10.1080/09500340110065772

Low- temperature growth of NiMnSb thin films by pulsed laser deposition

J. Giapintzakis, C. Grigorescu, A. Klini, A. Manousaki, V. Zorba, J. Androulakis, Z. Viskadourakis, and C. Fotakis

Appl. Phys. Lett. , 80, 2716 , 2002, 10.1063/1.1469211

Collective behaviour in a system of two-level atoms at the edge of a photonic band-gap

G. M. Nikolopoulos, P. Lambropoulos

J. Mod. Opt. , 49, 61, 2002, doi.org/10.1080/09500340110065772

Deposition of Er:YAG (YAP) layers by subpicosecond and nanosecond KrF excimer laser ablation

M. Jelinek, A. Klini, C. Grivas, J. Lančok, V. Studnička, J. Chval, A. Macková, C. Fotakis, Appl.

Surf. Sci. , 197-198 , 416, 2002, 10.1016/S0169-4332(02)00352-5

“Pulse Dependence of Ejection Efficiencies in the UV Ablation of Bi-Component van der Waals Solids”

A. Koubenakis, J. Labrakis, S. Georgiou

Ultrafast electron trapping times in low-temperature-grown gallium arsenide: The effect of the arsenic precipitate spacing and size

P. A. Loukakos, C. Kalpouzos, I. E. Perakis, Z. Hatzopoulos, M. Logaki, C. Fotakis

Appl. Phys. Lett., 79, 2883, 2001, https://doi.org/10.1063/1.1413219

Pages