IESL-FORTH
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Molecular beam epitaxy of thick InGaN (0001) films: Effects of substrate temperature on structural and electronic properties

Undefined
E Papadomanolaki, C Bazioti, SA Kazazis, M Androulidaki, GP Dimitrakopulos, E Iliopoulos
437
20-25
2016
doi.org/10.1016/j.jcrysgro.2015.12.012
Journal
Journal of Crystal Growth