IESL-FORTH

Molecular beam epitaxy of thick InGaN (0001) films: Effects of substrate temperature on structural and electronic properties

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Polarization-engineered InGaN/GaN solar cells: realistic expectations for single heterojunctions

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Optical properties of InGaN thin films in the entire composition range

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Evolution of stratification in high-alloy content InGaN epilayers grown on (0001) AlN

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Tuning carrier localization in In-rich InGaN alloys: Correlations between growth kinetics and optical properties

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Scaling of phonon frequencies and electron binding energies with interatomic distances in InxGa1−xN

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A comparative study of nanostructured Silicon-Nitride electrical properties for potential application in RF-MEMS capacitive switches

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Monolithic Intergrated Antenna and Schottky diode multiplier for free space millimeter wave power generation

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On the discharge transport mechanisms through the dielectric film in MEMS capacitive switches

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Thermally activated discharging mechanisms in SiNx films with embedded CNTs for RF MEMS capacitive switches

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